Direct measurement of AC electrokinetics properties and capture frequencies of silicon and silicon-germanium nanowires
| Description | |
| Date | |
| Authors | Merhej M., Honegger T., Bassani F., Baron T., Peyrade D., Drouin D., Salem B. |
| Year | 2018-0023 |
| Source-Title | Semiconductor Science and Technology |
| Affiliations | Univ. Grenoble Alpes, CNRS, CEA/Leti Minatec, LTM, Grenoble, France, Laboratoire Nanotechnologies Nanosystemes (LN2), CNRS UMI-3463, Université de Sherbrooke, 3000 Boul. Université, Sherbrooke, Qc, Canada, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boul. Université, Sherbrooke, Qc, Canada |
| Abstract | The assembly of semiconductor nanowires with nanoscale precision is crucial for their integration into functional systems. In this work, we propose a novel method to experimentally determine the real part of the Clausius-Mossotti factor (CMF) of silicon and silicon-germanium nanowires. The quantification of this CMF is measured with the nanowires velocities in a pure dielectrophoretic regime. This approach combined with a study on the connected nanowires alignment yield has led to a frequency of capture evaluation. In addition, we have also presented the morphology of nanowires assembly using dielectrophoresis for a wide frequency variation of AC electric fields. © 2017 IOP Publishing Ltd. |
| Author-Keywords | AC electrokinetics, Clausius-Mossotti factor, nanowires |
| Index-Keywords | Electric fields, Electrodynamics, Electrohydrodynamics, Electromagnetic fields, Electroosmosis, Electrophoresis, Germanium, Silicon, Ac electrokinetics, Clausius-mossotti factor, Dielectrophoretic, Direct measurement, Frequency variation, Functional systems, Nanoscale precision, Semiconductor nanowire, Nanowires |
| ISSN | 2681242 |
| Link | Link |