Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
| Description | |
| Date | |
| Authors | Cerba T., Martin M., Moeyaert J., David S., Rouviere J.L., Cerutti L., Alcotte R., Rodriguez J.B., Bawedin M., Boutry H., Bassani F., Bogumilowicz Y., Gergaud P., Tournié E., Baron T. |
| Year | 2018-0025 |
| Source-Title | Thin Solid Films |
| Affiliations | Univ. Grenoble Alpes, LTM, Grenoble, France, CNRS, LTM, 17 avenue des Martyrs, Grenoble, France, Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, 17 avenue des Martyrs, Grenoble, France, Univ. Grenoble Alpes, IMEP-LAHC, 3 parvis Louis Néel, Grenoble, France, Univ. Montpellier, IES, UMR 5214, Montpellier, France, CNRS, IES, UMR 5214, 860 rue Saint Priest, Montpellier, France, CEA, INAC/MEM, 17 avenue des Martyrs, Grenoble, France |
| Abstract | Antiphase boundaries free GaSb epitaxial layers with low surface roughness (< 0.5 nm) have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by metal organic chemical vapor deposition using a two-step growth process. By adjusting the growth temperature and the thickness of the nucleation layer, antiphase boundary free GaSb layers as thin as 250 nm are obtained. The 12% lattice mismatch between GaSb and Si is accommodated by both the formation of threading dislocations and a periodic array of 90° misfit dislocations at the interface. A GaSb layer inserted between AlSb barriers has been grown on an optimized GaSb/(001)-Si buffer layer and exhibits room temperature photoluminescence. © 2017 Elsevier B.V. |
| Author-Keywords | Gallium antimonide, Metal organic chemical vapor deposition, Rocking-curve, Silicon substrate, Surface roughness, Two-step growth, X-ray diffraction |
| Index-Keywords | Aluminum compounds, Chemical vapor deposition, Deposition, Dislocations (crystals), Gallium compounds, Industrial chemicals, Lattice mismatch, Metallorganic chemical vapor deposition, Microelectronics, Organic chemicals, Organometallics, Semiconductor quantum wells, Silicon, Substrates, Surface roughness, Vapor deposition, X ray diffraction, Gallium antimonide, Metal organic, Rocking curves, Silicon substrates, Two-step growth, Antimony compounds |
| ISSN | 406090 |
| Link | Link |