Fine electron biprism on a Si-on-insulator chip for off-axis electron holography
| Description | |
| Date | |
| Authors | Duchamp M., Girard O., Pozzi G., Soltner H., Winkler F., Speen R., Dunin-Borkowski R.E., Cooper D. |
| Year | 2018-0036 |
| Source-Title | Ultramicroscopy |
| Affiliations | School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore, Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C) and Peter Grünberg Institute (PGI), Forschungszentrum Jülich, Jülich, Germany, Université Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, Department of Physics and Astronomy, University of Bologna, viale B. Pichat 6/2, Bologna, Italy, Central Institute of Engineering, Electronics and Analytics (ZEA-1), Forschungszentrum Jülich, Jülich, Germany |
| Abstract | Off-axis electron holography allows both the amplitude and the phase shift of an electron wavefield propagating through a specimen in a transmission electron microscope to be recovered. The technique requires the use of an electron biprism to deflect an object wave and a reference wave to form an interference pattern. Here, we introduce an approach based on semiconductor processing technology to fabricate fine electron biprisms with rectangular cross-sections. By performing electrostatic calculations and preliminary experiments, we demonstrate that such biprisms promise improved performance for electron holography experiments. © 2017 The Authors |
| Author-Keywords | |
| Index-Keywords | Electron holography, Holography, Transmission electron microscopy, Electron biprism, Electrostatic calculations, Interference patterns, Off-axis electron holography, Rectangular cross-sections, Reference waves, Semiconductor processing technologies, Si-on-insulator, Electrons, silicon, silicon dioxide, Article, calculation, controlled study, electron, equipment design, fine electron biprism, holography, off-axis electron holography, Si-on-insulator chip, static electricity, technology, transmission electron microscopy |
| ISSN | 3043991 |
| Link | Link |