Study of amorphous Zinc Germanium Nitride thin films grown by reactive co-sputtering
| Description | |
| Date | |
| Authors | Beddelem N., Rochat N., Licitra C., Hyot B., Miska P. |
| Year | 2018-0046 |
| Source-Title | Journal of Non-Crystalline Solids |
| Affiliations | Institut Jean Lamour, CNRS - Université de Lorraine, Campus ARTEM, 2 allée André Guinier BP 50840, Nancy, France, CEA Tech en Grand Est, 5 rue Marconi, Metz, France, Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France |
| Abstract | Under its crystalline form, the ZnGeN2 alloy is promising for optoelectronic devices such as LEDs because of its large, direct and adjustable band gap. Nevertheless, data are scarce, more especially for the amorphous form. We report here on the study of zinc germanium nitride amorphous thin films obtained by reactive co-sputtering. The samples are elaborated by PVD and analyzed by physical and chemical methods to determine their composition, structure and optical properties. We observe a clear evolution of these properties with composition. The shape of the complex refractive index reveals changes in the electronic structure. Furthermore, the optical gap and Urbach energy decrease with increasing zinc content. © 2017 Elsevier B.V. |
| Author-Keywords | Amorphous semiconductors, Optical properties, Sputtering, Thin films |
| Index-Keywords | Amorphous films, Amorphous semiconductors, Chemical analysis, Electronic structure, Energy gap, Germanium, Germanium compounds, Nitrides, Optical properties, Optoelectronic devices, Reactive sputtering, Refractive index, Semiconducting germanium compounds, Sputter deposition, Sputtering, Zinc, Zinc compounds, Amorphous thin films, Chemical method, Complex refractive index, Crystalline form, Nitride thin films, Reactive co-sputtering, Urbach energy, Zinc content, Thin films |
| ISSN | 223093 |
| Link | Link |