Tuning direct bandgap GeSn/Ge quantum dots’ interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices
| Description | |
| Date | |
| Authors | Baira M., Salem B., Madhar N.A., Ilahi B. |
| Year | 2018-0076 |
| Source-Title | Superlattices and Microstructures |
| Affiliations | Faculty of Sciences, Micro-Optoelectronic and Nanostructures Laboratory, University of Monastir, Monastir, Tunisia, Univ. de Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, Grenoble, France, Department of Physics and Astronomy, College of Sciences, King Saud University, Riyadh, Saudi Arabia |
| Abstract | In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in ?-and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in ?-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions. © 2018 Elsevier Ltd |
| Author-Keywords | |
| Index-Keywords | CMOS integrated circuits, Energy gap, Landforms, Nanocrystals, Optical devices, Semiconductor quantum wells, Tin alloys, CMOS Compatible, Emission wavelength, Group-IV, Heavy holes, High efficient, Interband, IR wavelengths, L-valley, Semiconductor quantum dots |
| ISSN | 7496036 |
| Link | Link |