CEA-LETI MINATEC, 17 Rue des Martyrs, Grenoble, Cedex 9, France, STMicroelectronics, 850 Rue Jean Monnet, Crolles, France, ARKEMA France, Route Nationale 117, Lacq, France, ARKEMA France, 420 Rue d'Estienne d'Orves, Colombes, France

DSA patterning is a promising solution for advanced lithography as a complementary technique to standard and future lithographic technologies. In this work, we focused on DSA grapho-epitaxy process-flow dedicated for contact hole applications using polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymers. We investigated the impact on the DSA performances of the surface affinity of a guiding pattern design by ArF immersion lithography. The objective was to control and reduce the polymer residue at the bottom of the guiding pattern cavities since it can lead to lower a DSA-related defectivity after subsequent transfer of the DSA pattern. For this purpose, the DSA performances were evaluated as a function of the template surface affinity properties. The surface affinities were customized to enhance DSA performances for a PS-b-PMMA block copolymer (intrinsic period 35nm, cylindrical morphology) by monitoring three main key parameters: the hole open yield (HOY), the critical dimension uniformity (CDU-3?) and the placement error (PE-3?). Scanning transmission electron microscopy (STEM) was conjointly carried out on the optimized wafers to characterize the residual polymer thickness after PMMA removal. The best DSA process performances (i.e., hole open yield: 100%, CDU-3?: 1.3nm and PE-3?: 1.3nm) were achieved with a thickness polymer residue of 7 nm. In addition, the DSA-related defectivity investigation performed by review-SEM enabled us to achieve a dense (pitch 120nm) contact area superior to 0.01mm2 free of DSA-related defects. This result represents more than 6x105 SEM-inspected valid contacts, attesting the progress achieved over the last years and witnessing the maturity of the DSA in the case of contact holes shrink application. © 2017 SPIE.

advanced lithography, block copolymer, contact hole, defectivity, directed self-assembly, PS-b-PMMA

Esters, High resolution transmission electron microscopy, Lithography, Photolithography, Polymers, Polymethyl methacrylates, Scanning electron microscopy, Self assembly, Transmission electron microscopy, Advanced lithography, Contact holes, Critical dimension uniformities, Defectivity, Directed self-assembly, Lithographic technologies, Polystyrene-b-poly(methyl methacrylate), Scanning transmission electron microscopy, Block copolymers