Nanoimprint, DSA, and multi-beam lithography: Patterning technologies with new integration challenges
| Description | |
| Date | |
| Authors | Landis S., Teyssedre H., Claveau G., Servin I., Delachat F., Pourteau M.L., Gharbi A., Pimenta Barros P., Tiron R., Nouri L., Possemé N., May M., Brianceau P., Barnola S., Blancquaert Y., Pradelles J., Essomba P., Bernadac A., Dal'Zotto B., Bos S., Argoud M., Chamiot-Maitral G., Sarrazin A., Tallaron C., Lapeyre C., Pain L. |
| Year | 2017-0081 |
| Source-Title | Proceedings of SPIE - The International Society for Optical Engineering |
| Affiliations | CEA-LETI, Minatec Campus, 17 rue des martyrs, Grenoble Cedex 9, France |
| Abstract | In the lithography landscape, EUV technology recovered some credibility recently. However, its large adoption remains uncertain. Meanwhile, 193nm immersion lithography, with multiple-patterning strategies, supports the industry preference for advanced-node developments. In this landscape, lithography alternatives maintain promise for continued R and D. Massively parallel electron-beam and nano-imprint lithography techniques remain highly attractive, as they can provide noteworthy cost-of-ownership benefits. Directed self-assembly lithography shows promising resolution capabilities and appears to be an option to reduce multi-patterning strategies. Even if large amount of efforts are dedicated to overcome the lithography side issues, these solutions introduce also new challenges and opportunities for the integration schemes. © 2017 SPIE. |
| Author-Keywords | |
| Index-Keywords | Lithography, Self assembly, 193nm immersion lithography, Cost of ownership, Directed self-assembly lithographies, Integration scheme, Massively parallel electron beams, Multiple patterning, Patterning technology, Resolution capability, Nanoimprint lithography |
| ISSN | 0277786X |
| Link | Link |