Silicon anodization as a new way to transfer 3D nano-imprinted pattern into a substrate
| Description | |
| Date | |
| Authors | Nouri L., Posseme N., Landis S., Milesi F., Gaillard F.-X., Mariolle D., Licitra C. |
| Year | 2017-0082 |
| Source-Title | ECS Transactions |
| Affiliations | CEA-Leti, Minatec, 17 rue des Martyrs, Grenoble Cedex 9, France |
| Abstract | 3D complex structures are nowadays very challenging and require many complicated and expensive manufacturing steps. This work presents a new technique that allows obtaining 3D structures, on silicon based materials, in three steps: First, nano-imprint lithography defines a 3D pattern, then ion implantation step transfers the pattern image onto the subjacent layer and finally wet etching reveals the implanted areas. The concept has been proven on 2D patterns as well as 3D patterns. Physical, chemical and morphological characterizations have been investigated to understand the mechanisms involved in this process. © The Electrochemical Society. |
| Author-Keywords | |
| Index-Keywords | Ion implantation, 2D patterns, 3d patterns, 3D Structure, Complex structure, Morphological characterization, Pattern images, Silicon anodization, Silicon-based materials, Nanoimprint lithography |
| ISSN | 19385862 |
| Link | Link |