CEA, LETI, MINATEC Campus, 17 Rue de martyrs, Grenoble Cedex, France, STMicroelectronics, 850 rue Jean Monnet, Crolles Cedex, France, IMEP-LAHC, Minatec/INPG, Grenoble, France

In this paper, the Bias Temperature Instability effects of Lanthanum (La) and Aluminum (Al) incorporation, used for threshold voltage adjustment by dipole formation at the SiO2/HfON interface into the FDSOI gate dielectrics has been studied. When compared at the same oxide electric field (Eox), incorporation of La causes significant enhancement of intrinsic NBTI (Negative Bias Temperature Instability) effect and it reduces the already low PBTI (Positive Bias Temperature Instability) effect. On the other hand, comparison at the same Gate voltage (Vg) does not show the same behavior possibly due to the reduction of oxide field (Eox) by La dipole effect. Incorporation of Al does not have a significant impact on NBTI but it causes significant enhancement of PBTI, when compared both at the same Eox or same Vg. NBTI/PBTI degradations well correlate to the La and Al effective doses in the gate dielectrics. © 2017 IEEE.

Aluminum, High-K gate dielectrics, Lanthanum, MOS devices, Semiconductor device reliability

Aluminum, Bias voltage, Electric fields, Lanthanum, MOS devices, Negative bias temperature instability, Reliability, Semiconductor devices, Threshold voltage, Bias temperature instability, Dipole effects, Effective dose, High- k gate dielectrics, Positive bias temperature instabilities, Semiconductor device reliability, Threshold voltage shifts, Voltage adjustments, Gate dielectrics