Thermomechanical finite element modeling of Cu–SiO2 direct hybrid bonding with a dishing effect on Cu surfaces
| Description | |
| Date | |
| Authors | Beilliard Y., Estevez R., Parry G., McGarry P., Di Cioccio L., Coudrain P. |
| Year | 2017-0285 |
| Source-Title | International Journal of Solids and Structures |
| Affiliations | Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, SIMaP,UMR 5266, CNRS, Grenoble-INP, UJF, 1130 rue de la Piscine, B.P. 75, Saint Martin d'Hères, cedex, France, STMicroelectronics, 850 rue Jean Monnet, Crolles, France, National University of IrelandGalway, Ireland |
| Abstract | Copper direct bonding technology is considered to be one of the most promising approaches for matching the miniaturization needs in future tridimensional integrated high performance circuits (3D-IC). However, the bonding mechanism of copper surfaces with an initial dishing effect, induced by the polishing step, must be investigated in order to optimize the adhesion process and prevent further reliability issues. In this study, we present thermomechanical finite element simulations of Cu–SiO2 hybrid bonding with account for the annealing step and various amplitudes of the initial dishing. A cohesive model that mimics nonlinear interactions between Cu/Cu and SiO2/SiO2 interfaces and related bonding mechanism is implemented within a nonlinear contact mechanics strategy. The bonding process along with the influence of the annealing conditions and the copper plastic response on the closure of the Cu/Cu interface are investigated. © 2016 |
| Author-Keywords | 3D integration, Cohesive model, Direct bonding, Finite element analysis, Nonlinear contact mechanics |
| Index-Keywords | Copper, Deformation, Three dimensional integrated circuits, 3-D integration, Cohesive model, Direct bonding, Finite element simulations, High-performance circuits, Nonlinear contact, Nonlinear interactions, Thermo-mechanical finite element models, Finite element method |
| ISSN | 207683 |
| Link | Link |