STMicroelectronics, 850 rue Jean Monnet, Crolles, France, University Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, Groupe de Physique des Matériaux - GPM UMR CNRS 6634, Université de Rouen, Saint Etienne du Rouvray, France

Two types of industrial transistor technologies have been studied using atom probe tomography (APT). Both 14 nm node high-K metal-oxide-semiconductor field effect transistors (MOSFETs) on ultrathin body and buried oxide and 320 GHz Ft Si/SiGe Heterojunction Bipolar Transistors (HBT) embedded in a 55-nm BiCMOS chip have been analysed and their atomic distribution has been mapped. Due to the limitations of routine characterisation techniques, boron can remain invisible in such nanometric sized structures. Also, size effects can induce differences between the actual device and larger test zones used for monitoring these technologies. This paper presents results obtained by APT from two advanced nodes, in contrast to complementary techniques. Using different methodologies, including specific APT-friendly test structures and multiple-impact data filtering, the dopant behaviour in these structures can be better understood. An unexpected boron distribution in both the MOSFET source/drain and HBT base regions has been highlighted. © 2017 Author(s).

Atoms, Field effect transistors, Heterojunctions, Microelectronics, MOSFET devices, Probes, Si-Ge alloys, Silicon alloys, Transistors, Atom probe tomography, Atomic distribution, Boron distribution, Complementary techniques, Multiple impact, Si/sige heterojunction bipolar transistors, Test structure, Ultra-thin-body, Heterojunction bipolar transistors