Systematic evaluation of the split C-V based parameter extraction methodologies for 28 nm FD-SOI
| Description | |
| Date | |
| Authors | Pradeep K., Gouget G., Poiroux T., Scheer P., Juge A., Ghibaudo G. |
| Year | 2017-0289 |
| Source-Title | IEEE International Conference on Microelectronic Test Structures |
| Affiliations | STMicroelectronics, Crolles Site, 850 rue Jean Monnet, Crolles, France, CEA-Leti, MINATEC Campus, Grenoble Cedex 9, France, IMEP-LAHC, MINATEC Campus, 3 Parvis Louis Néel, Grenoble, Cedex 1, France |
| Abstract | In this work, robust methodologies for parameter extraction using split C-V measurements in FD-SOI structures are developed. These methods enable an automated and robust extraction procedure which is very important from an industrial perspective. The accuracy and robustness of the improved methods are verified using statistical measurements carried out on 28 nm FD-SOI devices and comparison with physical characterization. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Extraction, Finite difference method, Microelectronics, Parameter extraction, C-V measurement, Extraction procedure, Fd-soi devices, Physical characterization, SOI structure, Systematic evaluation, Parameter estimation |
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| Link | Link |