Mechanical simulations of BOX creep for strained FDSOI
| Description | |
| Date | |
| Authors | Berthelon R., Andrieu F., Mathieu B., Dutartre D., Le Royer C., Vinet M., Claverie A. |
| Year | 2017-0311 |
| Source-Title | Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings |
| Affiliations | CEA, LETI, Minatec Campus, 17 rue des Martyrs, Grenoble Cedex 9, France, STMicroelectronics, 850 rue Monnet, Crolles, France, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse Cedex 4, France |
| Abstract | The 'BOX creep' technique consists in introducing stress in a SOI layer by taking advantage of the creep of the buried oxide enabled its low viscosity at high temperature. In this study, we deeply investigate the impact of the structure geometry and parameters on the efficiency of creep through mechanical simulations. We find that a 1.1GPa stress can be achieved for an active length of 400nm. This result shows that BOX creep can be an efficient way to boost the performance of future FDSOI technology generations. © 2017 IEEE. |
| Author-Keywords | BOX creep, FDSOI, simulations, strain |
| Index-Keywords | Magnetic materials, Silicon compounds, Strain, Buried oxides, FDSOI, High temperature, Low viscosity, Mechanical simulations, simulations, Structure geometry, Creep |
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| Link | Link |