Sensitivity analysis of C-V global variability for 28 nm FD-SOI
| Description | |
| Date | |
| Authors | Pradeep K., Poiroux T., Scheer P., Gouget G., Juge A., Ghibaudo G. |
| Year | 2017-0313 |
| Source-Title | Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings |
| Affiliations | STMicroelectronics, Crolles Site, 850 rue Jean Monnet, Crolles, France, IMEP-LAHC, MINATEC Campus, 3 Parvis Louis Néel, Grenoble, Cedex 1, France, CEA, LETI, MINATEC Campus, Grenoble Cedex 9, France |
| Abstract | This work describes a statistical model for the C-V global variability of 28 nm FD-SOI using the sensitivities of the capacitance to each process parameter calculated using Leti-UTSOI compact model. The percentage contribution of each process parameter to the total C-V variation is explored to identify the dominant source of variation at different bias conditions. The proposed model provides an alternate method to directly extract the variance of the process parameters from the measured C-V variability. © 2017 IEEE. |
| Author-Keywords | characterization, FD-SOI, global variability, Leti-UTSOI, modeling, sensitivity analysis, split C-V |
| Index-Keywords | Characterization, Finite difference method, Models, Alternate method, Bias conditions, Compact model, FD-SOI, Global variability, Leti-UTSOI, Process parameters, Statistical modeling, Sensitivity analysis |
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| Link | Link |