About the intrinsic resistance variability in HfO2-based RRAM devices
| Description | |
| Date | |
| Authors | Cagli C., Piccolboni G., Garbin D., Grossi A., Molas G., Vianello E., Zambelli C., Reimbold G. |
| Year | 2017-0316 |
| Source-Title | Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings |
| Affiliations | CEA, LETI, Minatec Campus, Grenoble, France, ENDIF, Univ. of Ferrara, Ferrara, Italy |
| Abstract | Resistive memories (RRAM) are attracting a wide interest as candidates for the next generation memory technology, in particular for embedded and, more generally, for low power applications like IoT. However, their variability still remains a concern as the latter has been proven to be an intrinsic feature linked to the filamentary switching mechanism. In this paper we will review some recent key results by our and other groups that show the fundamental variability limits of the HfO2-based technology and some possible alternatives. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Hafnium oxides, Random access storage, Filamentary Switching, Intrinsic features, Intrinsic resistance, Low power application, Memory technology, Resistive memory (rram), RRAM |
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| Link | Link |