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Electrical Driven Light Emitting from a Tunneling Junction with Negative Resistance Effect

Published on 29 March 2018
Electrical Driven Light Emitting from a Tunneling Junction with Negative Resistance Effect
Description
 
Date 
Authors
Li C., Li Z., Chen K., Bai B., Dai Q.
Year2017-0329
Source-TitleIEEE Journal of the Electron Devices Society
Affiliations
Department of Electronic Materials Engineering, Kwangwoon University, Seoul, South, South Korea, CEA, LETI, Minatec, Grenoble, France
Abstract
We investigate the electrical and optical performance of surface-plasmon-mediated light emission in electrical-driven metal-insulator-metal (MIM) tunnel junctions fabricated from a gold (Au) film on the top and a heavily doped silicon chip on the bottom. A silicon dioxide layer is used as the tunneling barrier. The experimental results show that the device's performance strongly depends on the morphology of the Au film. A negative resistance effect was observed with high Au film roughness, from which higher efficient light emission was observed compared to that of our device exhibiting less roughness. Such MIM tunneling junctions are compatible with common metal-oxide semiconductor technology and thus open up a route toward the development of novel integrated optoelectronic and plasmonic devices. © 2013 IEEE.
Author-Keywords
inelastic tunneling, light emitting, Metal-insulator-metal, negative resistance effect field, surface plasmon
Index-Keywords
Doping (additives), Gold, Integrated optoelectronics, Light emission, Metal insulator boundaries, Metals, MOS devices, Negative resistance, Oxide semiconductors, Plasmons, Semiconductor device manufacture, Semiconductor devices, Semiconductor insulator boundaries, Semiconductor junctions, Surface resistance, Tunnel junctions, Heavily doped silicons, Inelastic tunneling, Metal insulator metals, Negative resistance effect, Optical performance, Silicon dioxide layers, Surface plasmons, Tunneling junctions, MIM devices
ISSN21686734
LinkLink

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