University Grenoble Alpes, CEA, LETI, MINATEC Campus, Grenoble, France, III-V Lab, Grenoble, France

GaN-based micro light-emitting diode (?LED) arrays are very promising devices for display applications. In these arrays, each ?LED works as a single pixel of a whole image. The electro-optical performance of these ?LEDs is an important subject to study. Here, we investigate the influence of LED size on the radiative and non-radiative recombination. The standard ABC model has been widely used to describe the efficiency of GaN based LEDs. Using this model, we extract A, B, and C coefficients for various LED sizes, showing how the competition between radiative and non-radiative recombination processes varies with the LED geometry. Time-resolved photoluminescence allows us to determine coefficient B, related to radiative recombination. Through current-voltage-luminance characterizations, we determine parameters A and C related to Shockley-Read-Hall and Auger recombination. We find that coefficient A is strongly dependent on LED size, indicating a drastic effect of sidewall defects on the performance of LEDs. On the other hand, coefficient C is independent of LED size. This latter result demonstrates that efficiency droop does not depend on LED size. © 2017 Author(s).

Augers, Display devices, Efficiency, Gallium nitride, Auger recombination, Display application, Efficiency droops, Electro optical performance, Non-radiative recombinations, Radiative recombination, Shockley read halls, Time-resolved photoluminescence, Light emitting diodes