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Frequency fluctuations in mono- and polysilicon resonators: A new limit of detection

Published on 29 March 2018
Frequency fluctuations in mono- and polysilicon resonators: A new limit of detection
Description
 
Date 
Authors
Sansa M., Ouerghi I., Gely M., Alava T., Ernst T., Jourdan G., Hentz S.
Year2017-0362
Source-TitleTRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
Affiliations
Université Grenoble Alpes, F-38000 Grenoble, France, CEA, LETI, Minatec Campus, F-38054 Grenoble, France
Abstract
It has been recently shown that resonance frequency fluctuations degrade the limit-of-detection of high-purity monocrystalline resonating sensors. A thorough literature study has shown this is likely the case for a wide variety of resonators. Here we provide additional insight into the physical source of these fluctuations: our results suggest that defect motion in the crystalline structure of the material is not a major source of frequency fluctuations in silicon resonators. © 2017 IEEE.
Author-Keywords
frequency stability, mass sensor, MEMS, NEMS, piezoresistive
Index-Keywords
Actuators, Frequency stability, MEMS, Microsystems, NEMS, Resonators, Transducers, Crystalline structure, Frequency fluctuation, Literature studies, Mass sensor, Piezo-resistive, Polysilicon resonators, Resonance frequencies, Resonating sensors, Solid-state sensors
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