Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector
| Description | |
| Date | |
| Authors | Urdampilleta M., Hutin L., Jadot B., Bertrand B., Bohuslavskyi H., Maurand R., Barraud S., Bauerle C., Sanquer M., Jehl X., De Franceschi S., Meunier T., Vinet M. |
| Year | 2017-0372 |
| Source-Title | Digest of Technical Papers - Symposium on VLSI Technology |
| Affiliations | Institut Néel, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble, France, CEA, INAC-PHELIQS, Grenoble, France |
| Abstract | We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option. © 2017 JSAP. |
| Author-Keywords | |
| Index-Keywords | Quantum computers, Quantum optics, Quantum theory, Semiconductor quantum dots, Silicon, VLSI circuits, Charge detectors, Fault-tolerant quantum computing, MOS technology, Quantum Computing, Real time monitoring, Single spin, Single-shot readout, Split gates, Semiconducting silicon |
| ISSN | 7431562 |
| Link | Link |