A comprehensive model on field-effect pnpn devices (Z2-FET)
| Description | |
| Date | |
| Authors | Taur Y., Lacord J., Parihar M.S., Wan J., Martinie S., Lee K., Bawedin M., Barbe J.-C., Cristoloveanu S. |
| Year | 2017-0382 |
| Source-Title | Solid-State Electronics |
| Affiliations | University of California, San Diego, United States, CEA-LETI, Grenoble, France, University of Grenoble Alpes, France, Fudan University, Shanghai, China |
| Abstract | A comprehensive model for field-effect pnpn devices (Z2-FET) is presented. It is based on three current continuity equations coupled to two MOS equations. The model reproduces the characteristic S-shaped I-V curve when the device is driven by a current source. The negative resistance region at intermediate currents occurs as the center junction undergoes a steep transition from reverse to forward bias. Also playing a vital role are the mix and match of the minority carrier diffusion current and the generation recombination current. Physical insights to the key mechanisms at work are gained by regional approximations of the model, from which analytical expressions for the maximum and minimum voltages at the switching points are derived. © 2017 Elsevier Ltd |
| Author-Keywords | |
| Index-Keywords | Solid state devices, Solid state physics, Analytical expressions, Comprehensive model, Current continuity, Current sources, Field effects, Generation recombination, Minority carrier diffusion, Switching points, Electronics engineering |
| ISSN | 381101 |
| Link | Link |