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RF Characterization and Modeling of 10 ?m Fine-Pitch Cu-Pillar on a High Density Silicon Interposer

Published on 29 March 2018
RF Characterization and Modeling of 10 ?m Fine-Pitch Cu-Pillar on a High Density Silicon Interposer
Description
 
Date 
Authors
Jacquinot H., Arnaud L., Garnier A., Bana F., Barbe J.C., Cheramy S.
Year2017-0396
Source-TitleProceedings - Electronic Components and Technology Conference
Affiliations
CEA, LETI, MINATEC Campus, Grenoble, France
Abstract
This work aims at providing a RLCG modeling ofthe 10 ?m fine-pitch microbump type interconnects in the 100 MHz-40 GHz frequency band based on characterization approach. RF measurements are performed on two-port test structures within a short-loop with chip to wafer assembly using the fine pitch 10 ?m Cu-pillar on a 10 Ohm.cm substrate resistivity silicon interposer. Accuracy is obtained thanks to a coplanar transmission line using 44 Cu-pillar transitions. To the author knowledge, it is the first time that RLCG modeling of fine-pitch Cu-pillar is extracted from experimental results. Another goal of this work is to get a better understanding of the main physical effects over a wide frequency range, especially concerning the key parameter of fine pitch Cu-pillar, i.e. the resistance. Finally, analysis based on the proposed RLCG modeling are performed to optimize over frequency the resistive interposer-to-chip link thanks to process modifications mitigating high frequency parasitic effects. © 2017 IEEE.
Author-Keywords
CPW, Cu-pillar, Fine pitch interconnects, Flip-chip, Microbump, NCP underfill, RF characterization, RLCG modeling, Skin effect
Index-Keywords
Characterization, Frequency bands, Network components, Silicon wafers, Skin effect, Cu pillar, Fine pitch interconnects, Flip chip, Micro-bumps, RF characterization, Underfills, Integrated circuit interconnects
ISSN5695503
LinkLink

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