You are here : Home > Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?

Publications

Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?

Published on 29 March 2018
Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?
Description
 
Date 
Authors
Chelnokov A., Pauc N., Gassenq A., Aubin J., Thai Q.M., Milord L., Bertrand M., Guilloy K., Rothman J., Zabel T., Sigg H., Hartmann J.M., Calvo V., Reboud V.
Year2017-0409
Source-TitleSummer Topicals Meeting Series, SUM 2017
Affiliations
Univ. Grenoble Alpes, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble, France, Univ. Grenoble Alpes, CEA-INAC, 17 rue des Martyrs, Grenoble, France, Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, Villigen, Switzerland
Abstract
For the near-infrared (near-IR) optical data communications, silicon photonics became a mature technology. Building on the technological developments associated with datacoms, silicon photonics now expands into the mid-infrared (mid-IR), mostly for the optical gas sensing. Here as well, the development is hampered by the absence of monolithically integrated laser sources compatible with the CMOS fab processing. © 2017 IEEE.
Author-Keywords
 
Index-Keywords
Germanium, Infrared devices, Photonic devices, Si-Ge alloys, Tin alloys, Mid infrared (mid IR), Monolithically integrated, Near Infrared, Optical data, Optical gas sensing, Si photonics, Silicon photonics, Technological development, Photonics
ISSN 
LinkLink

Retour à la liste