Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications
| Description | |
| Date | |
| Authors | Gassenq A., Guilloy K., Pauc N., Rouchon D., Widiez J., Rothman J., Hartmann J.-M., Chelnokov A., Reboud V., Calvo V. |
| Year | 2017-0433 |
| Source-Title | MRS Communications |
| Affiliations | Univ. Grenoble Alpes, CEA, INAC, PHELIQS, Grenoble, France, CEA-LETI, Univ. Grenoble Alpes, Grenoble, France |
| Abstract | Applying sufficient tensile strain to Ge leads to a direct bandgap group IV semiconductor, which emits in the mid-infrared (MIR) wavelength range. However, highly strained-Ge cannot be directly grown on Si because of its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms were then partially etched to keep locally strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated in Ge, which was bonded on Si. Our approach allows envisioning integrated strained-Ge on Si platform for MIR-integrated optics. Silicon photonics merge optical and electronic components that can be integrated together onto a single microchip. © 2017 Materials Research Society. |
| Author-Keywords | |
| Index-Keywords | Germanium, Infrared devices, Lattice mismatch, Photonics, Silicon, Electronic component, Group-IV semiconductors, Highly strained, Large lattice mismatch, Photonic application, Silicon photonics, Uniaxial stress, Wavelength ranges, Tensile strain |
| ISSN | 21596859 |
| Link | Link |