Thermal laser attack and high temperature heating on HfO2-based OxRAM cells
| Description | |
| Date | |
| Authors | Krakovinsky A., Bocquet M., Wacquez R., Coignus J., Portal J.-M. |
| Year | 2017-0448 |
| Source-Title | 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design, IOLTS 2017 |
| Affiliations | IM2NP, UMR CNRS 7334, Aix-Marseille Université, Avenue Escadrille Normandie Niemen, Case 142, Marseille Cedex 20, France, CEA - DRT/DPACA, Laboratoire SAS, Centre de Microélectronique de Provence, Site Georges Charpak, 880 Avenue de Mimet, Gardanne, France, CEA LETI, Minatec Campus, 17 Avenue des Martyrs, Grenoble Cedex, France |
| Abstract | The last 10 years have seen the rise of new NVM technologies as alternative solutions to Flash technology, which is facing downsizing issues. Apart from offering higher performance than the state of the art of Flash, one of their key features is lower power consumption, which makes them even more suitable for the IoT era. But one of the other main concerns regarding IoT is data security, which is yet to be evaluated for emerging NVM. Our previous work aimed at putting under test the integrity of HfO2 based resistive RAM (OxRAM cells). Bit-set occurrences were found after thermal laser attacks. This present work investigates the difference in behaviour when a selector is added to the resistive element, thanks to attack on different stacks. The results obtained give interesting tracks for the design of secure OxRAM-based ICs. It also studies the kinetic role of temperature through heating experiments. © 2017 IEEE. |
| Author-Keywords | 1T1R, Countermeasure, HfO2, Integrity, Laser, OxRAM, Retention, Security, Thermal Attacks |
| Index-Keywords | Hafnium oxides, Internet of things, Lasers, Systems analysis, 1T1R, Countermeasure, HfO2, Integrity, OxRAM, Retention, Security, Thermal attack, Hafnium compounds |
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| Link | Link |