Advances in the understanding of microscopic switching mechanisms in ReRAM devices (Invited paper)
| Description | |
| Date | |
| Authors | Skienard B., Blaise P., Traore B., Dragoni A., Nail C., Vianello E. |
| Year | 2017-0467 |
| Source-Title | European Solid-State Device Research Conference |
| Affiliations | Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC, Grenoble, France, Institut des Sciences Chimiques de Rennes (ISCR), Universite de Rennes, CNRS, Rennes, France, CNRS, Institut Neel, Grenoble, France, LTM, CNRS, Grenoble, France |
| Abstract | In this paper we present the recent advances in the understanding of microscopic mechanisms driving the resistive switching in ReRAM devices using ab initio theoretical methods. We highlight the complex interplay between interface reactions and charge injection in the generation of oxygen Frenkel pairs during the forming step. Energy barrier calculations suggest that the formation/destruction of the conductive filament can be due to movements of oxygen vacancies composing the filament or interaction with oxygen atoms released from the metal electrode. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Calculations, Oxygen, RRAM, Solid state devices, Conductive filaments, Frenkel pairs, Interface reactions, Metal electrodes, Microscopic mechanisms, Microscopic switching, Resistive switching, Theoretical methods, Oxygen vacancies |
| ISSN | 19308876 |
| Link | Link |