A new method for junctionless transistors parameters extraction
| Description | |
| Date | |
| Authors | Trevisoli R., Doria R.T., De Souza M., Pavanello M.A., Barraud S. |
| Year | 2017-0468 |
| Source-Title | European Solid-State Device Research Conference |
| Affiliations | Electrical Engineering Department, Centro Universitário, Sao Bernardo, Brazil, CEA, LETI, University Grenoble Alpes, Grenoble, France |
| Abstract | This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations and has been applied to experimental short-channel devices proving its applicability. © 2017 IEEE. |
| Author-Keywords | Effective Width, Extraction Method, Nanowires |
| Index-Keywords | Extraction, Nanowires, Solid state devices, 3-D numerical simulation, Doping concentration, Effective width, Extraction method, Junctionless transistors, Nanowire transistors, Parameters extraction, Short-channel devices, Numerical methods |
| ISSN | 19308876 |
| Link | Link |