On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes
| Description | |
| Date | |
| Authors | Vandendaele W., Lorin T., Gwoziecki R., Baines Y., Biscarrat J., Jaud M.A., Gillot C., Charles M., Plissonnier M., Reimbold G. |
| Year | 2017-0469 |
| Source-Title | European Solid-State Device Research Conference |
| Affiliations | CEA LETI, MINATEC Campus, 17 rue des Martyrs, Grenoble, France |
| Abstract | Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic Ron transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related hole trap in the GaN buffer layers (Ea = Et-Ev ? 0.9eV). These two parasitic effects can lead to long recovery time (>, 1ks) after reverse bias stress. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Carbon, Cathodes, Diodes, Electric current measurement, Electrodes, Gallium nitride, Schottky barrier diodes, Solid state devices, Transient analysis, Current collapse, Electron trapping, GaN buffer layers, Parasitic effect, Passivation layer, Relaxation measurements, Temperature dependent dynamics, Trapping effects, Gallium compounds |
| ISSN | 19308876 |
| Link | Link |