Institut des Nanotechnologies de Lyon, INL-CNRS UMR 5270, Univ. Lyon, Ecole Centrale de Lyon Bâtiment F7 36 av. Guy de Collongue, Ecully Cedex, France, CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, Grenoble, France, Luxembourg Institute of Science and Technology (LIST), Materials Research & Technology Department (MRT), 41 Rue du Brill, Belvaux, Luxembourg, Univ. Lyon, INSA-Lyon, Laboratoire de Génie Electrique et Ferroélectricité, LGEF EA682, Villeurbanne, France, ELyTMaX UMI 3757, CNRS - Université de Lyon - Tohoku University, International Joint Unit, Tohoku University, Room#503, MaSC Building, Katahira 2-1-1, Aoba-Ku, Sendai, Japan, Institut des Nanotechnologies de Lyon, INL-CNRS UMR 5270, Univ. Lyon, INSA de Lyon Bâtiment Blaise Pascal 7 avenue Jean Capelle, Villeurbanne Cedex, France

Polycrystalline (textured) and epitaxial 500 nm thick Pb(Zr0.52Ti0.48)O3 (PZT) layers have been monolithically integrated in metal-insulator-metal structure on silicon in order to compare their pyroelectric properties, both statically (under stabilized temperatures) and dynamically (when submitted to temperature transient as a pyroelectric device should work). The films have roughly the same out-of-plane orientation, and thus a similar out-of-plane remnant ferroelectric polarization around 12 ?C/cm2. Whereas their static pyroelectric coefficients are similar (around ?470 ?C m?2 K?1), the dynamic pyroelectric coefficient of the epitaxial layer is about one order of magnitude larger than that of the polycrystalline layer (?230 vs ?30 ?C m?2 K?1). This causes an important difference on the densities of converted pyroelectric energy by almost two orders of magnitude (1 vs 1.5 10?2 mJ/cm3 per cycle for temperature variations of ?6 K). This difference is explained here by the counterbalanced extrinsic pyroelectric contribution arising from the domain walls motion in the dynamical measurements. Extrinsic pyroelectric contribution appears almost twice larger on polycrystalline layer than on epitaxial layer (+430 vs +250 ?C m?2 K?1). These results are crucial for further design of advanced integrated pyroelectric-based nanodevices. © 2017 Elsevier Ltd

Energy conversion, Epitaxy, Extrinsic contribution, Integration, Pyroelectricity

Crystallography, Domain walls, Epitaxial growth, Ferroelectric films, Integration, Lead, Metal insulator boundaries, Nanostructured materials, Pyroelectricity, Extrinsic contribution, Ferroelectric polarization, Metal-insulator-metal structures, Monolithically integrated, Out-of-plane orientation, Polycrystalline layers, Pyroelectric coefficients, Pyroelectric properties, Energy conversion