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Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips

Published on 29 March 2018
Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips
Description
 
Date 
Authors
Masarotto L., Frey L., Charles M.L., Roule A., Rodriguez G., Souil R., Morales C., Larrey V.
Year2017-0270
Source-TitleThin Solid Films
Affiliations
Univ Grenoble Alpes, CEA LETI, MINATEC campus, F38054, Grenoble, France
Abstract
We present in this paper a method to measure the transmission spectra of optical filters composed of Complementary Metal-Oxide-Semiconductor (CMOS) compatible materials thin layers in order to be fully integrated on various types of CMOS image sensors (ambient light sensors, proximity detection, red green blue colour imaging, etc.). As the filters have to be deposited on top of a CMOS device, a good approach in order to evaluate with accuracy their response on chip is (i) to achieve the stacks on Si wafers (as it is the case for the CMOS sensor) (ii) then to perform a direct bonding of the structure on glass wafers (iii) in the end to remove the entire bulk silicon. In this way, we show the measured spectral responses of multilayer interference filters and can check particularly the agreement of the transmission peak with the theoretical calculations and its reproducibility wafer to wafer. It enables to optimize the filters optical designs and to demonstrate that the developed filters fulfill typical CMOS requirements of integration and reliability. © 2016 Elsevier B.V.
Author-Keywords
Materials characterization, Optical properties, Process characterization, Thin films, Wavelength filtering devices
Index-Keywords
Bandpass filters, Characterization, CMOS integrated circuits, Dielectric devices, Film preparation, Films, Glass bonding, Light transmission, Metallic compounds, Metals, MOS devices, Multilayers, Optical properties, Oxide semiconductors, Thin films, Transistors, Wafer bonding, Complementary metal oxide semiconductor chips, Complementary metal oxide semiconductors, Materials characterization, Multilayer interference filters, Process characterization, Theoretical calculations, Transmission measurements, Wavelength filtering devices, Silicon wafers
ISSN406090
LinkLink

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