Department of Electronic and Electrical Engineering, University College London, London, United Kingdom, Univ. Grenoble Alpes, CNRS, CEA-LETI, MINATEC, LTM, Grenoble, France

We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers. A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) substrate by metal-organic chemical vapor deposition (MOCVD). The QD laser structure was then grown on this APB-free GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE). Room-temperature cw lasing at ?1.3 ?m has been achieved with a threshold current density of 425 A/cm2 and single facet output power of 43 mW. Under pulsed operation, lasing operation up to 102°C has been realized, with a threshold current density of 250 A/cm2 and single facet output power exceeding 130 mW at room temperature. © 2017, OSA - The Optical Society. All rights reserved.

Continuous wave lasers, Gallium arsenide, Metallorganic chemical vapor deposition, Molecular beam epitaxy, Nanocrystals, Optical waveguides, Organic chemicals, Organometallics, Pumping (laser), Semiconducting gallium, Semiconductor quantum dots, Silicon, Substrates, Surface roughness, A3. metal organic chemical vapor deposition (MOCVD), Antiphase boundaries, Electrically pumped, Intermediate buffers, Pulsed operation, Root mean square (rms) surface roughness, Si (001) substrate, Virtual substrates, Quantum dot lasers