Pauli spin blockade in CMOS double quantum dot devices
| Description | |
| Date | |
| Authors | Kotekar-Patil D., Corna A., Maurand R., Crippa A., Orlov A., Barraud S., Hutin L., Vinet M., Jehl X., De Franceschi S., Sanquer M. |
| Year | 2017-0164 |
| Source-Title | Physica Status Solidi (B) Basic Research |
| Affiliations | Université Grenoble Alpes, INAC-PHELIQS, Grenoble, France, INAC-PHELIQS, CEA Grenoble, Grenoble, France, Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, United States, Université Grenoble Alpes, Grenoble, France, LETI MINATEC campus, CEA Grenoble, Grenoble, France |
| Abstract | Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here, we report on transport experiments in double gate nanowire transistors issued from a complementary metal–oxide–semiconductor (CMOS) process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet–triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6T. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| Author-Keywords | magneto-transport measurements, Pauli spin blockade, quantum dots, silicon, transistors |
| Index-Keywords | |
| ISSN | 3701972 |
| Link | Link |