Quantitative Analysis of la and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack
| Description | |
| Date | |
| Authors | Suarez-Segovia C., Leroux C., Domengie F., Ghibaudo G. |
| Year | 2017-0169 |
| Source-Title | IEEE Electron Device Letters |
| Affiliations | STMicroelectronics, Crolles, France, CEA, LETI, MINATEC Campus, Grenoble, France, IMEP-LAHC, MINATEC Campus, Grenoble, France |
| Abstract | Voltage drop induced by an electrical dipole layer after the incorporation of La or Al in high-k/metal gate-stack has been measured on nominal and beveled-SiOx devices and linearly correlated to the effective La/Al dose into the high-k/SiOx stack determined through X-ray fluorescence spectroscopy. Electrical dipoles were experimentally estimated to be around -55 and +40 meV for each 1× 1014 at/cm2 of effective La and Al dose, respectively. © 1980-2012 IEEE. |
| Author-Keywords | aluminum, capacitance measurement, diffusion processes, lanthanum alloys, Work function, X-ray spectroscopy |
| Index-Keywords | Capacitance, Capacitance measurement, Fluorescence spectroscopy, Lanthanum alloys, Logic gates, Work function, X ray spectroscopy, Diffusion process, Electrical dipoles, High- k, High-k/metal gates, Voltage drop, X ray fluorescence spectroscopy, Aluminum |
| ISSN | 7413106 |
| Link | Link |