Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration
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| Authors | Fenouillet-Beranger C., Acosta-Alba P., Mathieu B., Kerdilès S., Samson M.-P., Previtali B., Rambal N., Lapras V., Ibars F., Roman A., Kachtouli R., Besson P., Nieto J.-P., Pasini L., Brunet L., Aussenac F., Hartmann J.-M., Mazzamuto F., Toqué-Trésonne I., Huet K., Batude P., Vinet M. |
| Year | 2017-0093 |
| Source-Title | 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016 |
| Affiliations | CEA, Leti, MINATEC Campus, France, STMicroelectronics, France, SCREEN-LASSE, France |
| Abstract | In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF2). The different recrystallization states observed when tuning laser energy density are explained by numerical simulations. Within these conditions, the laser impact on the thermal stability of ULK/copper inter-tiers interconnections has been evaluated for a 28nm node backend metal 1 design rules technology both from morphological and electrical perspectives. This study highlights the interest of ns laser anneal for CoolCube™ 3D integration. © 2016 IEEE. |
| Author-Keywords | 3D, CoolCube, intermediary BEOL, Laser anneal, monolithic integration |
| Index-Keywords | Annealing, Chemical activation, Integrated circuit interconnects, Microelectronics, Thermodynamic stability, 3-D integration, CoolCube, Energy process, intermediary BEOL, Laser anneal, Laser annealing, Laser energy density, Monolithic integration, Integration |
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