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Influence of the crystal orientation on the operation of junctionless nanowire transistors

Published on 29 March 2018
Influence of the crystal orientation on the operation of junctionless nanowire transistors
Description
 
Date 
Authors
Trevisoli R., Doria R.T., De Souza M., Pavanello M.A., Barraud S., Vinet M.
Year2017-0090
Source-Title2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
Affiliations
Electrical Engineering Department, Centro Universitário FEI, Sao Bernardo do Campo, Brazil, CEA, LETI, Minatec Campus, University Grenoble Alpes, Grenoble, France
Abstract
This work presents, for the first time, an analysis of the influence of the crystal orientation on the electrical performance of Junctionless Nanowire Transistors. Experimental results demonstrate that the device rotation from the standard <110> to the <100> direction over a (100) SOI wafer can significantly degrade the performance of the transistors. © 2016 IEEE.
Author-Keywords
ION/IOFF ratio, Junctionless Nanowires Transistors, Orientation, Transconductance
Index-Keywords
Microelectronics, Nanowires, Silicon wafers, Transconductance, Transistors, Electrical performance, Nanowire transistors, Nanowires transistors, SOI wafers, Crystal orientation
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