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Impact of series resistance on the operation of junctionless transistors

Published on 29 March 2018
Impact of series resistance on the operation of junctionless transistors
Description
 
Date 
Authors
Jeon D.-Y., Park S.J., Mouis M., Barraud S., Kim G.-T., Ghibaudo G.
Year2017-0170
Source-TitleSolid-State Electronics
Affiliations
IMEP-LAHC, Grenoble INP, Minatec, BP 257, Grenoble, France, CEA-LETI Minatec, 17 rue des Martyrs, Grenoble, France, School of Electrical Engineering, Korea University, Seoul, South Korea
Abstract
Transconductance (gm) and its derivative (dgm/dVg) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (Rsd) causes significant degradation of intrinsic gm and dgm/dVg behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded Rsd effects. © 2016 Elsevier Ltd
Author-Keywords
Analytical modeling, Bulk neutral conduction, De-embedded Rsd effects, Junctionless transistors (JLTs), Series resistance (Rsd)
Index-Keywords
Analytical models, CMOS technology, De-embedded R<sub>sd</sub> effects, Junctionless transistors, Operation mechanism, Series resistances, Source/drain series resistances, Surface accumulation, Electric resistance
ISSN381101
LinkLink

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