Dielectrics stability for intermediate BEOL in 3D sequential integration
| Description | |
| Date | |
| Authors | Deprat F., Fenouillet-Beranger C., Jousseaume V., Guerin C., Beugin V., Rochat N., Licitra C., Caubet-Hilloutou V., Benoit D., Imbert G., Rambal N., Batude P., Vinet M. |
| Year | 2017-0102 |
| Source-Title | Microelectronic Engineering |
| Affiliations | Univ. Grenoble Alpes, Grenoble, France, CEA LETI, Minatec Campus, Grenoble, France, ST Microelectronics, 850 rue Jean Monnet, Crolles, France |
| Abstract | 3D sequential integration, such as CoolCube™, allows to stack vertically layer of devices. Levels of interconnection, also called intermediate Back-End-Of-Line, are needed between successive layers of transistors to avoid routing congestion. Thus, thermal stability of the dielectrics must be studied in order to fulfil the CoolCube™ requirement: at least to be stable up to 500 °C during 2 h. Consequently, the stability of several barrier layers and oxide based materials has been studied through optical characterizations (ellipsometry, Fourier Transform InfraRed spectroscopy and ellipsometric–porosimetry). SiCO (k = 4.5), in replacement of standard SiCNH (k = 5.6) material as barrier layer seems very promising. Regarding the inter-layer dielectric stability, the state-of-the-art porous SiOCH (k = 2.5) stays suitable for a thermal budget of 500 °C, 2 h. © 2016 |
| Author-Keywords | 3D integration, Dielectrics, Outgassing, Thermal stability |
| Index-Keywords | Budget control, Characterization, Degassing, Dielectric materials, Ellipsometry, Fourier transform infrared spectroscopy, Integration, Thermodynamic stability, 3-D integration, Back end of lines, Barrier layers, Inter-layer dielectrics, Optical characterization, Routing congestion, State of the art, Thermal budget, Stability |
| ISSN | 1679317 |
| Link | Link |