Conformal isolation of high-aspect-ratio TSVs using a low-? dielectric deposited by filament-assisted CVD
| Description | |
| Date | |
| Authors | Jousseaume V., Altemus B., Ribière C., Minoret S., Gottardi M., Ratin C., Ichiki K., Mourier T., Faguet J. |
| Year | 2017-0100 |
| Source-Title | Microelectronic Engineering |
| Affiliations | Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, US-Technology Development Center, TEL Technology Center, America, LLC, 255 Fuller Road, Suite 214, Albany, NY, United States, US-Technology Development Center, TEL Technology Center, America, LLC, 2400 Grove Blvd., Austin, TX, United States |
| Abstract | In this study, SiOCH thin films were deposited by filament assisted chemical vapor deposition using methyltriethoxysilane. It is shown that annealing the films at 400 °C (with or without UV-assist) is required to meet specifications in terms of dielectric properties (low-? values and good insulating properties). This work highlights FACVD as a promising technique to allow the deposition of conformal dielectric thin films within High-Aspect-Ratio TSVs. Step coverage higher than 70% were obtained within 10 ? 80 ?m TSVs. Then, FACVD deposited SiOCH films can be considered as a promising candidate for use within TSV technologies. © 2016 |
| Author-Keywords | |
| Index-Keywords | Chemical vapor deposition, Deposition, Dielectric properties, Thin films, Three dimensional integrated circuits, Vapor deposition, Dielectric thin films, High aspect ratio, Insulating properties, Kappa values, Methyltriethoxysilane, SiOC-H film, Step Coverage, Aspect ratio |
| ISSN | 1679317 |
| Link | Link |