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Postdocs

PsD-DRT-17-0038

Published on 7 December 2023
PsD-DRT-17-0038
Research FieldElectronics and microelectronics - Optoelectronics

Domaine-SThermal energy, combustion, flows

ThemeEngineering sciences

Theme-SEngineering sciences

Domaine
Electronics and microelectronics - Optoelectronics Engineering sciences Thermal energy, combustion, flows Engineering sciences DRT DCOS SCCS LGECA Grenoble
Title
Design of a power integrated circuit using GaN on Si, characterization, implementation.
Abstract
The objective is to propose an innovative solution to supply low voltage electronics (3 to 12VDC) or to charge accumulators, using industrial alternating voltages (230VAC / 400VAC). This type of device should benefit greatly from the contribution of integrated passive technologies and the possibilities offered by the ASICs developed at Leti, in particular GaN ASICs. This research program is part of the Leti’s ’power roadmap’. From the state of the art and concepts envisaged by CEA researchers, the post-doctoral student will have to imagine an original solution, to design it and then to characterize the prototype. The research program involves other academic partners, which allows the post-doctoral student to immerse himself in an upstream research context. An industrial application has been identified. The post-doctoral student will be encouraged to enrich the subject with additional functions in the control (regulation) at very high frequency, the transmission of isolated signals via the converter or any other proposals.
Location
Département Composants Silicium (LETI) Service Caractérisation, Conception et Simulation Laboratoire des circuits intégrés pour la Gestion de l'Energie, les Capteurs et Actionneurs
Pcontact
BERGOGNE Dominique CEA DRT/DACLE//LGECA CEA grenoble 04 38 78 23 91
Start date1/3/2017
Contact persondominique.bergogne@cea.fr

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