PsD-DRT-10-5615
| Research Field | Electronics and microelectronics - Optoelectronics
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| Domaine-S | Instrumentation
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| Theme | Engineering sciences
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| Theme-S | Engineering sciences
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| Domaine | Electronics and microelectronics - Optoelectronics
Engineering sciences
Instrumentation
Engineering sciences
DRT
DCOS
S3C
LCTE
Grenoble
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| Title | Electrical Characterization of resistive memory devices
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| Abstract | The activity of the postdoc will be focused on electrical characterization and physical modeling of devices with integrated bistable oxides (ie NiO, HfO2): mainly he will address both the hardware & methodology to address the non-volatile memory performances (ie write/erase, data retention and endurance), and he will perform measurements on several devices featuring different bistable oxides (ie NiO, HfO2…). Note that particular attention will be devoted to pulsed measurements tailored for “non-polar” or “bipolar” devices. After having collected sufficient ensemble of data on memory performance, he will try to interpret them in the simplest form with possibly semi-analitycal models in order to catch the basics of physics relying behind the electrical data.
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| Location | Département Composants Silicium (LETI)
Service des Composants pour le Calcul et la Connectivité
Laboratoire de Caractérisation et Test Electrique
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| Pcontact | PERNIOLA
Luca
CEA
DRT/DCOS/SCME/LCTE
17, Avenue des Martyrs, 38054, Grenoble Cedex 09
04 38 78 10 72
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| Start date | 1/6/2010 |
| Contact person | luca.perniola@cea.fr
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