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Flash memory can now pass the torch!


​ReRAM, or Resistive Random Access Memory dense, non-volatile, and a thousand times faster than flash memory is gaining traction on the microelectronics market. Researchers at CEA Tech institute Leti have developed a tool to make designing these new components easier.

Published on 15 November 2016

ReRAM is non-volatile, offers high integration density, and is as fast as DRAM (Dynamic RAM), a combination of benefits that is positioning ReRAM as the near-term successor of today's flash memory.

Under research conducted in partnership with a major manufacturer, Leti was tasked with determining ReRAM electrical specifications (programming voltage and current, write time, etc.) for a component offering 128 GB of storage accessible at speeds of 4 GB/s. Leti's researchers used Excel to develop a tool, "CrossPloration," to determine the main design constraints of the target memory. The tool can estimate design feasibility and calculate the memory's surface and power consumption depending on the system's electrical characteristics and the component's system-level specifications. It can also calculate the best compromise between performance and power consumption.

The tool will be a valuable resource in designing the large-capacity non-volatile memories that should soon offer the performance of DRAM at costs similar to flash memory.

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