Current-induced domain wall motion (CIDWM) is one of the most important spintronics research fields as it can be applied to new magnetic memories and shift register such as a the racetrack memory, spin-transfer majority gate, and so on. They constitute an attractive technology thanks to their non-volatility and fast operation. From material engineering, our group has focused on Mn4N and Mn4−xNixN films as new candidates for CIDWM, which are made of abundant and rare earth free elements. We recorded the DW velocity of 900 m/s in Mn4N, and 3000 m/s in Mn4−xNixN at the vicinity of its angular momentum compensation (at x ∼ 0.2) at room temperature. These are the fastest records among CIDWM by pure spin-transfer torques (STTs) and are highly competitive respect to most commonly used spin orbit torques. One another inserting feature is the reversal of the direction of propagation around this compensation point, that can be understood by a reversal of the local magnetic moment respect to the polarization of the spin polarized current. In this context, we investigated their magnetic and magneto-transport properties to understand especially the interaction between conduction and localized electrons and attempted to perform SOTs-driven CIDWM for more efficient operation.

https://www.spintec.fr/phd-defense-investigation-of-magneto-transport-properties-of-mn4n-based-nitrides-for-efficient-current-induced-domain-wall-motion/

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